ALEXANDRIA, Va., Sept. 24 -- United States Patent no. 12,745,462, issued on Sept. 22, was assigned to ALi Corp. (Hsinchu, Taiwan).
"Electrostatic discharge protection device" was invented by Sheng-Jun Chuang (Hsinchu, Taiwan).
According to the abstract* released by the U.S. Patent & Trademark Office: "Disclosed is an electrostatic discharge protection device, which includes a first-type semiconductor substrate, a first diode including a first first-type well and a first second-type well, a second diode including a second first-type well and a second second-type well, a first isolation structure and a second isolation structure. An upper surface of the first-type semiconductor substrate includes a first region where the first diode is form...