US Patent Issued to ALEDIA on Dec. 2 for "Method of forming a dielectric collar for semiconductor wires" (French Inventors)

ALEXANDRIA, Va., Dec. 2 -- United States Patent no. 12,490,568, issued on Dec. 2, was assigned to ALEDIA (Echirolles, France).

"Method of forming a dielectric collar for semiconductor wires" was invented by Wei Sin Tan (Echirolles, France), Pamela Rueda Fonseca (Fontaine, France) and Pierre Tchoulfian (Grenoble, France).

According to the abstract* released by the U.S. Patent & Trademark Office: "A method of forming a dielectric collar for semiconductor wires includes providing a layers stack and a semiconductor wires (SW) layer on top of the stack, forming a base layer at a lower part of the SW and a capping layer at an upper part of the SW, the base layer parallel to the basal plane and including a dielectric material surrounding the low...