US Patent Issued to Akoustis Technologies on Feb. 10 for "Methods of forming epitaxial AlScN resonators with superlattice structures including AlGaN interlayers and varied scandium concentrations for stress control and related structures" (New York, North Carolina Inventors)

ALEXANDRIA, Va., Feb. 11 -- United States Patent no. 12,549,150, issued on Feb. 10, was assigned to Akoustis Technologies Corp. (Huntersville, N.C.).

"Methods of forming epitaxial AlScN resonators with superlattice structures including AlGaN interlayers and varied scandium concentrations for stress control and related structures" was invented by Craig Moe (Penfield, N.Y.), Jeffrey M. Leathersich (Rochester, N.Y.) and Jeffrey B. Shealy (Cornelius, N.C.).

According to the abstract* released by the U.S. Patent & Trademark Office: "A method of forming a resonator structure can be provided by forming one or more template layers on a substrate, (a) epitaxially forming an AlScN layer on the template layer to a first thickness, (b) epitaxially fo...