ALEXANDRIA, Va., Aug. 12 -- United States Patent no. 12,703,914, issued on Aug. 11, was assigned to AIR WATER INC. (Osaka, Japan) and AIR WATER PERFORMANCE CHEMICAL INC. (Kanagawa, Japan).
"Method for forming silicon oxide film" was invented by Keisuke Nagata (Matsumoto, Japan), Yosuke Ebihara (Matsumoto, Japan) and Hiroyuki Honda (Matsumoto, Japan).
According to the abstract* released by the U.S. Patent & Trademark Office: "A method for forming a silicon oxide film, containing: a provision step of providing a substrate in a reactor; a first introduction step of introducing, into the reactor, at least one silicon compound represented by Formula (1); a first purge step of purging the reactor with purge gas; a second introduction step of in...