US Patent Issued to Agency for Science, Technology and Research on March 3 for "Method and arrangement for forming a transition metal dichalcogenide layer" (Singaporean Inventors)

ALEXANDRIA, Va., March 3 -- United States Patent no. 12,565,700, issued on March 3, was assigned to Agency for Science, Technology and Research (Singapore).

"Method and arrangement for forming a transition metal dichalcogenide layer" was invented by Swee Liang Wong (Singapore), Yee Fun Lim (Singapore) and Dongzhi Chi (Singapore).

According to the abstract* released by the U.S. Patent & Trademark Office: "A method of forming a transition metal dichalcogenide layer on a substrate is provided. The method may include providing a transition metal oxide, a chalcogen source, a non-gaseous chalcogen scavenger, and a substrate, wherein the substrate is disposed downstream of the transition metal oxide and the chalcogen source, and wherein the non-...