ALEXANDRIA, Va., July 15 -- United States Patent no. 12,666,713, issued on June 23, was assigned to Advanced Micro Devices Inc. (Santa Clara, Calif.).
"Double side transistors on same silicon wafer" was invented by Chandra Sekhar Mandalapu (Santa Clara, Calif.), Rahul Agarwal (Livermore, Calif.), Rajasekaran Swaminathan (Austin, Texas) and Richard T. Schultz (Fort Collins, Colo.).
According to the abstract* released by the U.S. Patent & Trademark Office: "An apparatus and method for efficiently increasing semiconductor chip functionality in a particular area. A semiconductor fabrication process (or process) grows a silicon substrate layer, and forms multiple p-type and n-type transistors along a front side surface of the silicon substrate...