US Patent Issued to Advanced Micro Devices on Dec. 2 for "Through silicon via macro with dense layout for placement in an integrated circuit floorplan" (American, Chinese Inventors)

ALEXANDRIA, Va., Dec. 2 -- United States Patent no. 12,488,171, issued on Dec. 2, was assigned to Advanced Micro Devices Inc. (Santa Clara, Calif.).

"Through silicon via macro with dense layout for placement in an integrated circuit floorplan" was invented by Michael Edward Griffith (Ft. Collins, Colo.), Aaron Keiichi Horiuchi (Ft. Collins, Colo.), Donald A. Clay (Boxborough, Mass.), Eric William Busta (Ft. Collins, Colo.), Hye Jung Stanford (Austin, Texas), Kathryn E. Wilcox (Boxborough, Mass.), Ruochen Xie (Shanghai), Russell Schreiber (Austin, Texas), Stephen J. Dussinger (Ft. Collins, Colo.), William Edwin Laub Jr. (Boxborough, Mass.) and Te-Hsuan Chen (Boxborough, Mass.).

According to the abstract* released by the U.S. Patent & Trade...