US Patent Issued to Acorn Semi on Feb. 17 for "Strained semiconductor using elastic edge relaxation of a stressor combined with buried insulating layer" (California Inventors)

ALEXANDRIA, Va., Feb. 17 -- United States Patent no. 12,557,347, issued on Feb. 17, was assigned to Acorn Semi LLC (Palo Alto, Calif.).

"Strained semiconductor using elastic edge relaxation of a stressor combined with buried insulating layer" was invented by Paul A. Clifton (Redwood City, Calif.) and R. Stockton Gaines (Pacific Palisades, Calif.).

According to the abstract* released by the U.S. Patent & Trademark Office: "An SOI wafer contains a compressively stressed buried insulator structure. In one example, the stressed buried insulator (BOX) may be formed on a host wafer by forming silicon oxide, silicon nitride and silicon oxide layers so that the silicon nitride layer is compressively stressed. Wafer bonding provides the surface si...