US Patent Issued on March 31 for "Method for manufacturing semiconductor device by removing carrier after forming re-distribution layer" (Japanese Inventors)

ALEXANDRIA, Va., March 31 -- United States Patent no. 12,593,657, issued on March 31.

"Method for manufacturing semiconductor device by removing carrier after forming re-distribution layer" was invented by Hiroaki Matsubara (Tokyo), Daisuke Ikeda (Tokyo), Keisuke Okawara (Tokyo), Shogo Sobue (Tokyo) and Saeko Ogawa (Tokyo).

According to the abstract* released by the U.S. Patent & Trademark Office: "A method for manufacturing a semiconductor device includes preparing a temporary fixing structure body in which semiconductor elements each including a first surface on which a connection terminal is formed and a second surface are attached to a temporary fixing material, forming a curable bonding adhesive layer on the second surface of each of...