US Patent Issued on March 17 for "Technologies for transistors with a ferroelectric gate dielectric" (Oregon, Washington, New York, California Inventors)

ALEXANDRIA, Va., March 17 -- United States Patent no. 12,581,696, issued on March 17.

"Technologies for transistors with a ferroelectric gate dielectric" was invented by Dmitri Evgenievich Nikonov (Beaverton, Ore.), Chia-Ching Lin (Portland, Ore.), Uygar E. Avci (Portland, Ore.), Tanay A. Gosavi (Portland, Ore.), Raseong Kim (Portland, Ore.), Ian Alexander Young (Olympia, Wash.), Hai Li (Portland, Ore.), Ashish Verma Penumatcha (Beaverton, Ore.), Ramamoorthy Ramesh (Moraga, Calif.) and Darrell G. Schlom (Ithaca, N.Y.).

According to the abstract* released by the U.S. Patent & Trademark Office: "Technologies for a transistor with a ferroelectric gate dielectric are disclosed. In the illustrative embodiment, a transistor has a ferroelectric ...