US Patent Issued on June 30 for "Memory arrays comprising strings of memory cells and methods used in forming a memory array comprising strings of memory cells" (Idaho Inventors)

ALEXANDRIA, Va., July 16 -- United States Patent no. 12,672,281, issued on June 30.

"Memory arrays comprising strings of memory cells and methods used in forming a memory array comprising strings of memory cells" was invented by Collin Howder (Meridian, Idaho) and Chet E. Carter (Boise, Idaho).

According to the abstract* released by the U.S. Patent & Trademark Office: "A method used in forming a memory array comprising strings of memory cells comprises forming a stack comprising vertically-alternating first tiers and second tiers above a substrate. Horizontally-elongated trenches are formed into the stack to form laterally-spaced memory-block regions. Catalytic material is formed in a bottom region of individual of the trenches. Metal mat...