US Patent Issued on June 23 for "Local backside contact isolation for merged backside contact patterning" (New York Inventors)

ALEXANDRIA, Va., July 15 -- United States Patent no. 12,666,652, issued on June 23.

"Local backside contact isolation for merged backside contact patterning" was invented by Gideon Oyibo (Rensselaer, N.Y.), Tao Li (Slingerlands, N.Y.), Ruilong Xie (Niskayuna, N.Y.) and Nicolas Jean Loubet (Guilderland, N.Y.).

According to the abstract* released by the U.S. Patent & Trademark Office: "A microelectronic structure including a first nanosheet transistor that includes a first source/drain. A second nanosheet transistor that is adjacent to the first nanosheet transistor and the second nanosheet transistor includes a second source/drain. A first backside contact connected to a backside surface of the first source/drain. A second backside contact...