US Patent Issued on June 2 for "Advanced power MOS R DS-on driven lifetime prediction" (Italian Inventors)

ALEXANDRIA, Va., June 2 -- United States Patent no. 12,644,919, issued on June 2.

"Advanced power MOS R DS-on driven lifetime prediction" was invented by Carmelo Pino (Catania, Italy), Francesco Rundo (Gravina di Catania, Italy), Salvatore Coffa (Milan) and Concetto Spampinato (Catania, Italy).

According to the abstract* released by the U.S. Patent & Trademark Office: "According to an embodiment, a system is proposed for predicting future drain-to-source resistance values of a power metal-oxide-semiconductor field-effect transistor (MOSFET). The system includes a current sensing circuit configured to extract a drain current of the power MOSFET during a transient or switching phase of the power MOSFET; a conditioning circuit configured to ...