US Patent Issued on Jan. 20 for "Memory arrays and methods used in forming a memory array comprising strings of memory cells" (Idaho Inventors)

ALEXANDRIA, Va., Jan. 20 -- United States Patent no. 12,532,474, issued on Jan. 20.

"Memory arrays and methods used in forming a memory array comprising strings of memory cells" was invented by John D. Hopkins (Meridian, Idaho) and Lifang Xu (Boise, Idaho).

According to the abstract* released by the U.S. Patent & Trademark Office: "A memory array comprising strings of memory cells comprises a vertical stack comprising alternating insulative tiers and conductive tiers. Channel-material strings of memory cells are in the stack. The channel-material strings project upwardly from material of an uppermost of the tiers. A first insulator material is above the material of the uppermost tier directly against sides of channel material of the upwar...