US Patent Issued on Feb. 24 for "Reactive gas modulation for group III/IV compound deposition systems" (Minnesota Inventor)

ALEXANDRIA, Va., Feb. 24 -- United States Patent no. 12,559,860, issued on Feb. 24.

"Reactive gas modulation for group III/IV compound deposition systems" was invented by Robbie J. Jorgenson (Minneapolis).

According to the abstract* released by the U.S. Patent & Trademark Office: "A process for producing semiconductor structures comprising one of more layers of Group III/IV Compounds deposited onto a template using PVD sputtering the resulting semiconductor structures is provided according to the invention. The Group III or Group IV material may be gallium, hafnium, indium, aluminum, silicon, germanium, magnesium and/or zirconium. The anion provided by a reactive gas may be nitride, oxide, arsenide, or phosphide. The flow of the reactive ...