US Patent Issued on Feb. 17 for "Method for forming an LiCoO2 film and device for carrying out same" (Belarusian, Canadian, Russian Inventors)

ALEXANDRIA, Va., Feb. 17 -- United States Patent no. 12,553,122, issued on Feb. 17.

"Method for forming an LiCoO2 film and device for carrying out same" was invented by Iaroslav Anatolevich Korolenko (Moskow, Russia), Airat Khamitovich Khisamov (Minskij, Belarus), Sergei Mikhailovich Nastochkin (Minsk, Belarus) and Aleksandr Viktorovich Rossokhatyi (Verdun, Canada).

According to the abstract* released by the U.S. Patent & Trademark Office: "A method of LiCoO2 film formation involves depositing a LiCoO2 layer on a substrate. This deposition is conducted by reactive magnetron sputtering of a metal cobalt (Co) target in lithium (Li) vapor onto a substrate in a vacuum chamber. A lithium tank is heated to the lithium melting point and a gas-ca...