US Patent Issued on Dec. 23 for "Memory controller and memory system performing write disturbance management" (Chinese Inventors)

ALEXANDRIA, Va., Dec. 23 -- United States Patent no. 12,504,883, issued on Dec. 23.

"Memory controller and memory system performing write disturbance management" was invented by Hua Tan (Wuhan, China), Xing Wang (Wuhan, China), Yaolong Gao (Wuhan, China), Fanya Bi (Wuhan, China), Zhe Sun (Wuhan, China) and Bo Yu (Wuhan, China).

According to the abstract* released by the U.S. Patent & Trademark Office: "In certain aspects, a method for operating a non-volatile memory device is provided. The non-volatile memory device includes memory units. A write count of a first memory unit of the memory units is determined. In response to the write count of the first memory unit reaching one of preset values, a flipped bit count (FBC) of a second memory...