ALEXANDRIA, Va., April 15 -- United States Patent no. 12,604,756, issued on April 14.
"Method for manufacturing semiconductor device" was invented by Hiroaki Matsubara (Tokyo), Daisuke Ikeda (Tokyo), Keisuke Okawara (Tokyo), Shogo Sobue (Tokyo) and Saeko Ogawa (Tokyo).
According to the abstract* released by the U.S. Patent & Trademark Office: "A method for manufacturing a semiconductor device includes preparing a plurality of semiconductor elements each including a first surface on which a connection terminal is formed and a second surface on a side opposite to the first surface, preparing a support member in which a curable bonding adhesive layer is formed on a carrier, attaching the plurality of semiconductor elements to the support mem...