INTERNATIONAL PATENT: THE REGENTS OF THE UNIVERSITY OF MICHIGAN FILES APPLICATION FOR "MOTT CONDUCTION IN DOPED III-NITRIDE SEMICONDUCTORS"

GENEVA, Dec. 17 -- THE REGENTS OF THE UNIVERSITY OF MICHIGAN (1600 Huron Parkway2nd FloorAnn Arbor, Michigan 48109) filed a patent application (PCT/US2025/032858) for "MOTT CONDUCTION IN DOPED III-NITRIDE SEMICONDUCTORS" on Jun 09, 2025. With publication no. WO/2025/255569, the details related to the patent application was published on Dec 11, 2025.

Notably, the patent application was submitted under the International Patent Classification (IPC) system, which is managed by the World Intellectual Property Organization (WIPO).

Inventor(s): MONDAL, Shubham (1600 Huron Parkway2nd FloorAnn Arbor, Michigan 48109), MI, Zetian (1600 Huron Parkway2nd FloorAnn Arbor, Michigan 48109)

Abstract: A device includes a substrate and a heterostructure sup...