INTERNATIONAL PATENT: THE PENN STATE RESEARCH FOUNDATION FILES APPLICATION FOR "A DESIGN STRATEGY FOR HIGH-PERFORMANCE P-TYPE TWO-DIMENSIONAL FIELD EFFECT TRANSISTORS"

GENEVA, Dec. 2 -- THE PENN STATE RESEARCH FOUNDATION (304 Old MainUniversity Park, Pennsylvania 16802) filed a patent application (PCT/US2025/018509) for "A DESIGN STRATEGY FOR HIGH-PERFORMANCE P-TYPE TWO-DIMENSIONAL FIELD EFFECT TRANSISTORS" on Mar 05, 2025. With publication no. WO/2025/244715, the details related to the patent application was published on Nov 27, 2025.

Notably, the patent application was submitted under the International Patent Classification (IPC) system, which is managed by the World Intellectual Property Organization (WIPO).

Inventor(s): DAS, Saptarshi (N-333 Millennium Science ComplexState College, Pennsylvania 16802), DAS, Mayukh (N-303/8 Millennium Science ComplexState College, Pennsylvania 16802), SEN, Dipanjan (...