INTERNATIONAL PATENT: SUMITOMO ELECTRIC INDUSTRIES, LTD., 住友電気工業株式会社 FILES APPLICATION FOR "METHOD FOR MANUFACTURING SILICON CARBIDE EPITAXIAL SUBSTRATE, DEVICE FOR MANUFACTURING SILICON CARBIDE EPITAXIAL SUBSTRATE, METHOD FOR MANUFACTURING SILICON CARBIDE SEMICONDUCTOR DEVICE AND PROGRAM"

GENEVA, Feb. 23 -- SUMITOMO ELECTRIC INDUSTRIES, LTD. (5-33, Kitahama 4-chome, Chuo-ku, Osaka-shi, Osaka5410041), 住友電気工業株式会社 (大阪府大阪市中央区北浜四丁目５番３３号) filed a patent application (PCT/JP2024/028889) for "METHOD FOR MANUFACTURING SILICON CARBIDE EPITAXIAL SUBSTRATE, DEVICE FOR MANUFACTURING SILICON CARBIDE EPITAXIAL SUBSTRATE, METHOD FOR MANUFACTURING SILICON CARBIDE SEMICONDUCTOR DEVICE, AND PROGRAM" on Aug 13, 2024. With publication no. WO/2026/038307, the details related to the patent application was published on Feb 19, 2026.

Notably, the pat...