GENEVA, Oct. 1 -- INVENTCHIP TECHNOLOGY CO., LTD. filed a patent application (CN2025/147734) for “STRUCTURE OF TRENCH-GATE POWER MOSFET, AND METHOD FOR MANUFACTURING TRENCH-GATE POWER MOSFET”. With publication no. WO/2026/188971, here are the other details related to the patent application:
Kind: Initial Publication with ISR [A1]
IPC: H10D 62/10
Notably, the patent application was submitted under the International Patent Classification (IPC) system, which is managed by the World Intellectual Property Organization (WIPO).
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