International Patent: STATIC RANDOM-ACCESS MEMORY (SRAM) ARCHITECTURE USING WORD LINE (WL) CUT BIT CELL

GENEVA, Sept. 7 -- QUALCOMM INCORPORATED filed a patent application (US2026/015205) for “STATIC RANDOM-ACCESS MEMORY (SRAM) ARCHITECTURE USING WORD LINE (WL) CUT BIT CELL”. With publication no. WO/2026/182934, here are the other details related to the patent application:

Kind: Initial Publication with ISR [A1]

IPC: G11C 11/412

Notably, the patent application was submitted under the International Patent Classification (IPC) system, which is managed by the World Intellectual Property Organization (WIPO).

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