INTERNATIONAL PATENT: SOUTHEAST UNIVERSITY, 东南大学, CSMC TECHNOLOGIES FAB2 CO., LTD., 无锡华润上华科技有限公司 FILES APPLICATION FOR "PLANAR SPLIT-GATE VDMOSFET AND MANUFACTURING METHOD THEREFOR"

Posted On: 2026-04-05

GENEVA, April 5 -- SOUTHEAST UNIVERSITY (Sipailou 2#, Xuanwu DistrictNanjing, Jiangsu 210096), 东南大学 (中国江苏省南京市玄武区四牌楼2号), CSMC TECHNOLOGIES FAB2 CO., LTD. (Plot 86.87, Wuxi National High Tech Industrial Development ZoneWuxi, Jiangsu 214028), 无锡华润上华科技有限公司 (中国江苏省无锡市无锡国家高新技术产业开发区86.87号地块) filed a patent application (PCT/CN2025/120650) for "PLANAR SPLIT-GATE VDMOSFET A...

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इस लेख के रीप्रिंट को खरीदने या इस प्रकाशन का पूरा फ़ीड प्राप्त करने के लिए, कृपया हमे संपर्क करें.

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INTERNATIONAL PATENT: SOUTHEAST UNIVERSITY, 东南大学, CSMC TECHNOLOGIES FAB2 CO., LTD., 无锡华润上华科技有限公司 FILES APPLICATION FOR "PLANAR SPLIT-GATE VDMOSFET AND MANUFACTURING METHOD THEREFOR"