GENEVA, May 4 -- SOITEC (Parc Technologique des Fontaines Chemin des Franques38190 BERNIN) filed a patent application (PCT/EP2025/080251) for "SUBSTRATE FOR MANUFACTURING A HIGH-ELECTRON-MOBILITY TRANSISTOR" on Oct 21, 2025. With publication no. WO/2026/087452, the details related to the patent application was published on Apr 30, 2026.
Notably, the patent application was submitted under the International Patent Classification (IPC) system, which is managed by the World Intellectual Property Organization (WIPO).
Inventor(s): BOUDET, Thierry (c/o SOITEC Parc technologique des Fontaines Chemin des Franques38190 BERNIN)
Abstract: The present invention relates to a substrate for manufacturing a high-electron-mobility transistor (HEMT), succe...