INTERNATIONAL PATENT: SILICON STORAGE TECHNOLOGY, INC. FILES APPLICATION FOR "TRACKING MEMORY CELLS FOR CURRENT LEAKAGE COMPENSATION IN NON-VOLATILE MEMORY ARRAY"

GENEVA, May 5 -- SILICON STORAGE TECHNOLOGY, INC. (450 Holger WaySan Jose, California 95134) filed a patent application (PCT/US2025/012222) for "TRACKING MEMORY CELLS FOR CURRENT LEAKAGE COMPENSATION IN NON-VOLATILE MEMORY ARRAY" on Jan 17, 2025. With publication no. WO/2026/089747, the details related to the patent application was published on Apr 30, 2026.

Notably, the patent application was submitted under the International Patent Classification (IPC) system, which is managed by the World Intellectual Property Organization (WIPO).

Inventor(s): XING, Leo (No. 18 Lane 2277 Zuchongzhi RoadShanghai, Shanghai 201210), ZHANG, Jianhua (2277 Zuzhichong RoadShanghai, Shanghai 201213), ZHANG, Brain (No. 99, East Chenchun Road, Pudong New AreaSha...