INTERNATIONAL PATENT: SICC CO., LTD., 山东天岳先进科技股份有限公司 FILES APPLICATION FOR "METHOD FOR ELIMINATING TIME-DEPENDENT HAZE FORMED ON SILICON CARBIDE AND HIGH-STABILITY SILICON CARBIDE SUBSTRATE"

GENEVA, July 14 -- SICC CO., LTD. (No. 99, Tianyue South Road,Huaiyin DistrictJinan, Shandong 250118), 山东天岳先进科技股份有限公司 (中国山东省济南市槐荫区天岳南路99号) filed a patent application (PCT/CN2024/094672) for "METHOD FOR ELIMINATING TIME-DEPENDENT HAZE FORMED ON SILICON CARBIDE, AND HIGH-STABILITY SILICON CARBIDE SUBSTRATE" on May 22, 2024. With publication no. WO/2025/145517, the details related to the patent application was published on Jul 10, 2025.

Notably, the patent application was submitted under the International Patent Classification (IPC) sys...