GENEVA, March 10 -- SHIN-ETSU HANDOTAI CO., LTD. (2-1, Ohtemachi 2-chome, Chiyoda-ku, Tokyo1000004), 信越半導体株式会社 (東京都千代田区大手町二丁目２番１号) filed a patent application (PCT/JP2025/028239) for "SUBSTRATE CONTAINING CARBON-DOPED SILICON EPITAXIAL LAYER AND METHOD FOR MANUFACTURING SAME" on Aug 08, 2025. With publication no. WO/2026/048485, the details related to the patent application was published on Mar 05, 2026.
Notably, the patent application was submitted under the International Patent Classification (IPC) system, which is managed by the World Intellectual Property Or...