International Patent: SELECTIVE TEMPLATING GROWTH TECHNIQUE FOR ROBUST LOW-DIMENSIONAL INTERFACES IN PEROVSKITE SOLAR CELLS

GENEVA, Aug. 14 -- NANYANG TECHNOLOGICAL UNIVERSITY filed a patent application (SG2026/050083) for “SELECTIVE TEMPLATING GROWTH TECHNIQUE FOR ROBUST LOW-DIMENSIONAL INTERFACES IN PEROVSKITE SOLAR CELLS”. With publication no. WO/2026/169217, here are the other details related to the patent application:

Kind: Initial Publication with ISR [A1]

IPC: H10K 71/40

Notably, the patent application was submitted under the International Patent Classification (IPC) system, which is managed by the World Intellectual Property Organization (WIPO).

Disclaimer: Curated by HT Syndication....