INTERNATIONAL PATENT: SANDISK TECHNOLOGIES, INC. FILES APPLICATION FOR "STEP VOLTAGE DURING CURRENT FORCE READ OF PROGRAMMABLE RESISTANCE MEMORY CELL WITH THRESHOLD SWITCHING SELECTOR"

GENEVA, Dec. 31 -- SANDISK TECHNOLOGIES, INC. (951 SanDisk DriveMilpitas, California 95035) filed a patent application (PCT/US2025/010874) for "STEP VOLTAGE DURING CURRENT FORCE READ OF PROGRAMMABLE RESISTANCE MEMORY CELL WITH THRESHOLD SWITCHING SELECTOR" on Jan 09, 2025. With publication no. WO/2025/264265, the details related to the patent application was published on Dec 26, 2025.

Notably, the patent application was submitted under the International Patent Classification (IPC) system, which is managed by the World Intellectual Property Organization (WIPO).

Inventor(s): SAENZ, Juan P. (951 SanDisk DriveMilpitas, California 95035), GROBIS, Michael K. (951 SanDisk DriveMilpitas, California 95035)

Abstract: Technology for reading memory ...