INTERNATIONAL PATENT: SANDISK TECHNOLOGIES, INC. FILES APPLICATION FOR "MEMORY DEVICE INCLUDING A PERFORATED DIELECTRIC BRIDGE LAYER AND METHOD FOR FORMING THE SAME"

GENEVA, April 20 -- SANDISK TECHNOLOGIES, INC. (951 Sandisk DriveMilpitas, California 95035) filed a patent application (PCT/US2025/026895) for "MEMORY DEVICE INCLUDING A PERFORATED DIELECTRIC BRIDGE LAYER AND METHOD FOR FORMING THE SAME" on Apr 29, 2025. With publication no. WO/2026/080105, the details related to the patent application was published on Apr 16, 2026.

Notably, the patent application was submitted under the International Patent Classification (IPC) system, which is managed by the World Intellectual Property Organization (WIPO).

Inventor(s): MATSUNO, Koichi (c/o Sandisk Technologies, Inc.951 Sandisk DriveMilpitas, California 95035), RAJASHEKHAR, Adarsh (c/o Sandisk Technologies, Inc.951 Sandisk DriveMilpitas, California 9503...