INTERNATIONAL PATENT: SAGA UNIVERSITY, 国立大学法人佐賀大学 FILES APPLICATION FOR "SUBSTRATE FOR ELECTRONIC DEVICE, FIELD EFFECT TRANSISTOR AND METHOD FOR MANUFACTURING SUBSTRATE FOR ELECTRONIC DEVICE"

GENEVA, March 18 -- SAGA UNIVERSITY (1, Honjo-machi, Saga-shi, Saga8408502), 国立大学法人佐賀大学 (佐賀県佐賀市本庄町１番地) filed a patent application (PCT/JP2025/031874) for "SUBSTRATE FOR ELECTRONIC DEVICE, FIELD EFFECT TRANSISTOR, AND METHOD FOR MANUFACTURING SUBSTRATE FOR ELECTRONIC DEVICE" on Sep 09, 2025. With publication no. WO/2026/054112, the details related to the patent application was published on Mar 12, 2026.

Notably, the patent application was submitted under the International Patent Classification (IPC) system, which is managed by the World Intellectual Property Organization (WIPO).

Inventor(...