International Patent: RESISTIVE SWITCHING IN OXIDES GROWN DIRECTLY ON SILICON WAFERS

GENEVA, July 2 -- TEXAS STATE UNIVERSITY filed a patent application (US2025/059780) for “RESISTIVE SWITCHING IN OXIDES GROWN DIRECTLY ON SILICON WAFERS”. With publication no. WO/2026/136316, here are the other details related to the patent application:

Kind: Initial Publication with ISR [A1]

IPC: G11C 13/00

Notably, the patent application was submitted under the International Patent Classification (IPC) system, which is managed by the World Intellectual Property Organization (WIPO).

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