International Patent: RADICAL GAS HEIGHT CONTROL BETWEEN PLASMA SOURCE AND WAFER

GENEVA, June 26 -- APPLIED MATERIALS, INC. filed a patent application (US2025/058105) for “RADICAL GAS HEIGHT CONTROL BETWEEN PLASMA SOURCE AND WAFER”. With publication no. WO/2026/122792, here are the other details related to the patent application:

Kind: Initial Publication with ISR [A1]

IPC: H01J 37/32

Notably, the patent application was submitted under the International Patent Classification (IPC) system, which is managed by the World Intellectual Property Organization (WIPO).

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