INTERNATIONAL PATENT: QUALCOMM INCORPORATED FILES APPLICATION FOR "THROUGH SILICON VIA (TSV) BUS COMPRESSION-REDISTRIBUTION DIE FOR HIGH-BANDWIDTH THREE-DIMENSIONAL DYNAMIC RANDOM-ACCESS MEMORY (3D DRAM) FOR FLEXIBLE PROCESSING UNIT (PU) PLACEMENT, IMPROVED THERMAL AND KNOWN GOOD DIE (KGD) DRAM PLACEMENT FOR HIGH-YIELD"

GENEVA, March 11 -- QUALCOMM INCORPORATED (ATTN: International IP Administration5775 Morehouse DriveSan Diego, California 92121-1714) filed a patent application (PCT/US2025/044122) for "THROUGH SILICON VIA (TSV) BUS COMPRESSION-REDISTRIBUTION DIE FOR HIGH-BANDWIDTH THREE-DIMENSIONAL DYNAMIC RANDOM-ACCESS MEMORY (3D DRAM) FOR FLEXIBLE PROCESSING UNIT (PU) PLACEMENT, IMPROVED THERMAL, AND KNOWN GOOD DIE (KGD) DRAM PLACEMENT FOR HIGH-YIELD" on Aug 29, 2025. With publication no. WO/2026/050600, the details related to the patent application was published on Mar 05, 2026.

Notably, the patent application was submitted under the International Patent Classification (IPC) system, which is managed by the World Intellectual Property Organization (WIPO...