INTERNATIONAL PATENT: QUALCOMM INCORPORATED FILES APPLICATION FOR "SEPARATE METAL REGIONS IN A LAYER OF A PILLAR BAR VIA ON A TRANSISTOR ROW IN AN INTEGRATED CIRCUIT (IC) TO REDUCE STRESS AND RELATED FABRICATION METHODS"

GENEVA, March 31 -- QUALCOMM INCORPORATED (ATTN: International IP Administration5775 Morehouse DriveSan Diego, California 92121-1714) filed a patent application (PCT/US2025/044444) for "SEPARATE METAL REGIONS IN A LAYER OF A PILLAR BAR VIA ON A TRANSISTOR ROW IN AN INTEGRATED CIRCUIT (IC) TO REDUCE STRESS AND RELATED FABRICATION METHODS" on Sep 02, 2025. With publication no. WO/2026/064108, the details related to the patent application was published on Mar 26, 2026.

Notably, the patent application was submitted under the International Patent Classification (IPC) system, which is managed by the World Intellectual Property Organization (WIPO).

Inventor(s): ZHANG, Wenyue Lydia (5775 Morehouse DriveSan Diego, California 92121), VALI, Alireza ...