International Patent: P-TYPE GROUP IIIA METAL OXIDE SEMICONDUCTOR THIN FILM AND PREPARATION METHOD THEREFOR

GENEVA, Oct. 1 -- THE HONG KONG UNIVERSITY OF SCIENCE AND TECHNOLOGY (GUANGZHOU) filed a patent application (CN2025/121235) for “P-TYPE GROUP IIIA METAL OXIDE SEMICONDUCTOR THIN FILM AND PREPARATION METHOD THEREFOR”. With publication no. WO/2026/188762, here are the other details related to the patent application:

Kind: Initial Publication with ISR [A1]

IPC: C23C 16/18

Notably, the patent application was submitted under the International Patent Classification (IPC) system, which is managed by the World Intellectual Property Organization (WIPO).

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