INTERNATIONAL PATENT: NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY, 国立研究開発法人産業技術総合研究所 FILES APPLICATION FOR "LAYERED STRUCTURE, METHOD FOR MANUFACTURING SAME AND SEMICONDUCTOR DEVICE"

GENEVA, Jan. 27 -- NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY (3-1, Kasumigaseki 1-chome, Chiyoda-ku, Tokyo1008921), 国立研究開発法人産業技術総合研究所 (東京都千代田区霞が関１丁目３番１号) filed a patent application (PCT/JP2025/023452) for "LAYERED STRUCTURE, METHOD FOR MANUFACTURING SAME, AND SEMICONDUCTOR DEVICE" on Jun 30, 2025. With publication no. WO/2026/018667, the details related to the patent application was published on Jan 22, 2026.

Notably, the patent application was submitted under the International Paten...