INTERNATIONAL PATENT: MORGAN ADVANCED MATERIALS AND TECHNOLOGY INC. FILES APPLICATION FOR "GROWTH CHAMBER FOR SINGLE CRYSTAL SILICON CARBIDE PRODUCTION"

GENEVA, April 20 -- MORGAN ADVANCED MATERIALS AND TECHNOLOGY INC. (441 Hall AvenueSt Marys, Pennsylvania 15857) filed a patent application (PCT/US2025/050459) for "GROWTH CHAMBER FOR SINGLE CRYSTAL SILICON CARBIDE PRODUCTION" on Oct 10, 2025. With publication no. WO/2026/080821, the details related to the patent application was published on Apr 16, 2026.

Notably, the patent application was submitted under the International Patent Classification (IPC) system, which is managed by the World Intellectual Property Organization (WIPO).

Inventor(s): ABRAHAMSON, Joseph (c/o Morgan Advanced Materials and Technology Inc.441 Hall AvenueSt Marys, Pennsylvania 15857), VALLEJOS BURGOS, Fernando (c/o Morgan Advanced Materials and Technology Inc.441 Hall...