INTERNATIONAL PATENT: MICROSEMI SOC CORP. FILES APPLICATION FOR "RADIATION HARDENED MEMORY CELL"

GENEVA, March 31 -- MICROSEMI SOC CORP. (2355 W. Chandler Blvd.Chandler, Arizona 85224) filed a patent application (PCT/US2024/056415) for "RADIATION HARDENED MEMORY CELL" on Nov 18, 2024. With publication no. WO/2026/063956, the details related to the patent application was published on Mar 26, 2026.

Notably, the patent application was submitted under the International Patent Classification (IPC) system, which is managed by the World Intellectual Property Organization (WIPO).

Inventor(s): NGUYEN, Victor (4825 Cornflower St.San Ramon, California 94582)

Abstract: A memory cell comprises NMOS and PMOS transistors and voltage-controlled impedance components (VCICs). A first NMOS transistor and a first PMOS transistor form a first inverter. ...