INTERNATIONAL PATENT: MICRON TECHNOLOGY, INC. FILES APPLICATION FOR "SEMICONDUCTOR DEVICE WITH INDEPENDENT SOURCE-DRAIN REGION PROFILES FOR LOW VOLTAGE AND HIGH VOLTAGE FINFET TRANSISTORS"

GENEVA, Feb. 10 -- MICRON TECHNOLOGY, INC. (8000 South Federal Way, Post Office Box 6Boise, Idaho 83707-0006) filed a patent application (PCT/US2025/035435) for "SEMICONDUCTOR DEVICE WITH INDEPENDENT SOURCE-DRAIN REGION PROFILES FOR LOW VOLTAGE AND HIGH VOLTAGE FINFET TRANSISTORS" on Jun 26, 2025. With publication no. WO/2026/029894, the details related to the patent application was published on Feb 05, 2026.

Notably, the patent application was submitted under the International Patent Classification (IPC) system, which is managed by the World Intellectual Property Organization (WIPO).

Inventor(s): HIRAMATSU, Takehiro (#401, 1-18-33 Saijochuo, HigashihiroshimaHiroshima, 739-0025), MIYASHITA, Toshihiko (Placido U A201, 6-5-22 Saijochuo, Hig...