INTERNATIONAL PATENT: MICRON TECHNOLOGY, INC. FILES APPLICATION FOR "P-TYPE AND N-TYPE DOPING OF A BACKSIDE SOURCE FOR MEMORY CHANNELS"

GENEVA, April 29 -- MICRON TECHNOLOGY, INC. (8000 S. Federal WayBoise, Idaho 83716-9632) filed a patent application (PCT/US2025/048644) for "P-TYPE AND N-TYPE DOPING OF A BACKSIDE SOURCE FOR MEMORY CHANNELS" on Sep 30, 2025. With publication no. WO/2026/084868, the details related to the patent application was published on Apr 23, 2026.

Notably, the patent application was submitted under the International Patent Classification (IPC) system, which is managed by the World Intellectual Property Organization (WIPO).

Inventor(s): HIGUCHI, Masaaki (8000 S. Federal WayBoise, Idaho 83716-9632), FUJIKI, Jun (8000 S. Federal WayBoise, Idaho 83716-9632), FUKUZUMI, Yoshiaki (8000 S. Federal WayBoise, Idaho 83716-9632), NAKAGAWA, Kenichiro (8000 S. Fe...