International Patent: METHODS FOR WET ATOMIC LAYER ETCHING OF TITANIUM NITRIDE USING OXIDATION

GENEVA, Oct. 30 -- TOKYO ELECTRON LIMITED filed a patent application (US2026/019632) for “METHODS FOR WET ATOMIC LAYER ETCHING OF TITANIUM NITRIDE USING OXIDATION”. With publication no. WO/2026/226295, here are the other details related to the patent application:

Kind: Initial Publication with ISR [A1]

IPC: H10P 50/66

Notably, the patent application was submitted under the International Patent Classification (IPC) system, which is managed by the World Intellectual Property Organization (WIPO).

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