International Patent: METHODS FOR WET ATOMIC LAYER ETCHING OF TITANIUM NITRIDE USING HALOGENATION

GENEVA, Aug. 7 -- TOKYO ELECTRON LIMITED filed a patent application (US2025/047758) for “METHODS FOR WET ATOMIC LAYER ETCHING OF TITANIUM NITRIDE USING HALOGENATION”. With publication no. WO/2026/164686, here are the other details related to the patent application:

Kind: Initial Publication with ISR [A1]

IPC: H10P 50/26

Notably, the patent application was submitted under the International Patent Classification (IPC) system, which is managed by the World Intellectual Property Organization (WIPO).

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