International Patent: METHODS FOR IMPROVING ETCH PROFILES OF SEMICONDUCTOR DEVICES

GENEVA, Aug. 7 -- TOKYO ELECTRON LIMITED filed a patent application (US2025/045001) for “METHODS FOR IMPROVING ETCH PROFILES OF SEMICONDUCTOR DEVICES”. With publication no. WO/2026/164683, here are the other details related to the patent application:

Kind: Initial Publication with ISR [A1]

IPC: H01L 21/308

Notably, the patent application was submitted under the International Patent Classification (IPC) system, which is managed by the World Intellectual Property Organization (WIPO).

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