International Patent: METHOD FOR PRODUCING A SEMICONDUCTOR WAFER BY MEANS OF EPITAXIAL DEPOSITION, SEED WAFER AND METHOD FOR SEED WAFER PRODUCTION

GENEVA, June 24 -- NEXWAFE GMBH filed a patent application (EP2025/084609) for “METHOD FOR PRODUCING A SEMICONDUCTOR WAFER BY MEANS OF EPITAXIAL DEPOSITION, SEED WAFER AND METHOD FOR SEED WAFER PRODUCTION”. With publication no. WO/2026/115067, here are the other details related to the patent application:

Kind: Initial Publication with ISR [A1]

IPC: C30B 25/18

Notably, the patent application was submitted under the International Patent Classification (IPC) system, which is managed by the World Intellectual Property Organization (WIPO).

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