GENEVA, Sept. 7 -- SHANGHAI HUAHONG GRACE SEMICONDUCTOR MANUFACTURING CORPORATION filed a patent application (CN2025/113206) for “METHOD FOR MONITORING EPITAXIAL FILLING RATE AND DOPING CONCENTRATION OF DEEP TRENCH SUPER JUNCTION PRODUCT”. With publication no. WO/2026/179074, here are the other details related to the patent application:
Kind: Initial Publication with ISR [A1]
IPC: H01L 21/66
Notably, the patent application was submitted under the International Patent Classification (IPC) system, which is managed by the World Intellectual Property Organization (WIPO).
Disclaimer: Curated by HT Syndication....