International Patent: METHOD FOR MEASURING BMDS IN HEAVILY DOPED P-TYPE SILICON WAFERS, METHOD AND SYSTEM FOR ACQUIRING OPTIMAL HEAT TREATMENT CONDITIONS FOR BMD GROWTH IN SILICON WAFERS, AND COMPUTER-READABLE MEDIUM

GENEVA, July 6 -- ZING SEMICONDUCTOR CORPORATION filed a patent application (CN2025/121381) for “METHOD FOR MEASURING BMDS IN HEAVILY DOPED P-TYPE SILICON WAFERS, METHOD AND SYSTEM FOR ACQUIRING OPTIMAL HEAT TREATMENT CONDITIONS FOR BMD GROWTH IN SILICON WAFERS, AND COMPUTER-READABLE MEDIUM”. With publication no. WO/2026/138007, here are the other details related to the patent application:

Kind: Initial Publication with ISR [A1]

IPC: H01L 21/66

Notably, the patent application was submitted under the International Patent Classification (IPC) system, which is managed by the World Intellectual Property Organization (WIPO).

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