International Patent: METHOD FOR MANUFACTURING POLYCRYSTALLINE SILICON CARBIDE INGOT, METHOD FOR MANUFACTURING POLYCRYSTALLINE SILICON CARBIDE WAFER, AND METHOD FOR MANUFACTURING SILICON CARBIDE SEMICONDUCTOR DEVICE

GENEVA, Sept. 24 -- FUJI ELECTRIC CO., LTD. filed a patent application (JP2026/003955) for “METHOD FOR MANUFACTURING POLYCRYSTALLINE SILICON CARBIDE INGOT, METHOD FOR MANUFACTURING POLYCRYSTALLINE SILICON CARBIDE WAFER, AND METHOD FOR MANUFACTURING SILICON CARBIDE SEMICONDUCTOR DEVICE”. With publication no. WO/2026/196848, here are the other details related to the patent application:

Kind: Initial Publication with ISR [A1]

IPC: C23C 16/42

Notably, the patent application was submitted under the International Patent Classification (IPC) system, which is managed by the World Intellectual Property Organization (WIPO).

Disclaimer: Curated by HT Syndication....