International Patent: METHOD FOR FABRICATION OF FINE-FEATURED ETCH MASK USING DIRECT ATOMIC LAYER PROCESSING

GENEVA, July 9 -- ATLANT 3D, APS filed a patent application (US2025/011322) for “METHOD FOR FABRICATION OF FINE-FEATURED ETCH MASK USING DIRECT ATOMIC LAYER PROCESSING”. With publication no. WO/2025/151845, here are the other details related to the patent application:

Kind: Correction of entry in Section I of the PCT Gazette [A8]

IPC: H01L 21/027

Notably, the patent application was submitted under the International Patent Classification (IPC) system, which is managed by the World Intellectual Property Organization (WIPO).

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